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| PD - 91405C IRF5210S/L HEXFET(R) Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -100V RDS(on) = 0.06 G ID = -40A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF5210L) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -40 -29 -140 3.8 200 1.3 20 780 -21 20 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. --- --- Max. 0.75 40 Units C/W 5/13/98 IRF5210S/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -100 --- --- -2.0 10 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.11 --- --- --- --- --- --- --- --- --- --- 17 86 79 81 7.5 2700 790 450 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.06 VGS = -10V, ID = -24A -4.0 V VDS = VGS, ID = -250A --- S VDS = -50V, ID = -21A -25 VDS = -100V, VGS = 0V A -250 VDS = -80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 180 ID = -21A 25 nC VDS = -80V 97 VGS = -10V, See Fig. 6 and 13 --- VDD = -50V --- ID = -21A ns --- RG = 2.5 --- RD = 2.4, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- -40 showing the A G integral reverse --- --- -140 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -24A, VGS = 0V --- 170 260 ns TJ = 25C, IF = -21A --- 1.2 1.8 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Uses IRF5210 data and test conditions Starting TJ = 25C, L = 3.1mH RG = 25, I AS = -21A. (See Figure 12) TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ISD -21A, di/dt -480A/s, VDD V(BR)DSS, IRF5210S/L 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V TO P 1000 -ID , D rain-to-S ou rc e C urre nt (A ) 100 -ID , Drain-to-Source Current (A ) VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 100 10 10 -4 .5V 4 0 s P U LS E W ID TH T C = 1 75 C 0.1 1 10 1 0.1 1 -4.5 V 4 0 s P U LS E W ID TH T c = 2 5C A 10 100 1 100 A -VD S , D rain-to-S ourc e V oltage (V ) -VD S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e (N o rm alize d) I D = -3 5A -I D , D rain-to-S ource C urrent (A) 2.5 100 TJ = 2 5 C TJ = 17 5 C 2.0 1.5 10 1.0 0.5 1 4 5 6 7 V DS = -5 0 V 4 0 s P U L S E W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 VG S = -10 V 100 120 140 160 180 A -VG S , Ga te -to-Source Volta ge (V) T J , J unc tion T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF5210S/L 6000 20 5000 -V G S , G ate-to-S ource V oltage (V ) C iss V GS C iss C rs s C o ss = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d I D = -2 1A V D S = -80 V V D S = -50 V V D S = -20 V 16 C , Capacitance (pF) 4000 C oss 3000 12 C rss 2000 8 4 1000 0 1 10 100 A 0 0 40 80 FO R TE S T CIR C U IT S E E FIG U R E 1 3 120 160 A 200 -VD S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 -I S D , Reverse D rain Current (A ) O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R D S (o n) -I D , D rain C urrent (A ) 100 100 10 s TJ = 1 75 C T J = 2 5C 10 100s 10 1m s 1 0.4 0.8 1.2 1.6 V G S = 0V 2.0 A 1 1 T C = 25 C T J = 17 5C S ing le P u lse 10 10m s 2.4 A 100 1000 -VS D , S ourc e-to-D rain V oltage (V ) -VD S , D rain-to-S ourc e V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRF5210S/L 50 VDS 40 RD VGS RG -ID , Drain Current (A) D.U.T. + 30 -10V 20 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 10 td(on) tr t d(off) tf 0 25 50 75 100 125 150 175 VGS 10% TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - V DD IRF5210S/L 2000 VDS L E A S , S ingle Pulse Avalanc he E nergy (m J) TOP 1600 RG D .U .T IA S D R IV E R 0 .0 1 B O T TO M ID -8 .6A -1 5A -21 A VD D A -2 0 V tp 1200 800 15V Fig 12a. Unclamped Inductive Test Circuit 400 0 25 50 75 100 125 150 A 175 IAS S tarting T J , J unc tion T em perature (C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit + QGS QGD D.U.T. - -10V VDS IRF5210S/L Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - + RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS IRF5210S/L D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM 0.5 5 (.022 ) 0.4 6 (.018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X Part Marking Information D2Pak IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK IRF5210S/L Package Outline TO-262 Outline Part Marking Information TO-262 IRF5210S/L Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) 1 .60 (.06 3) 1 .50 (.05 9) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 ) F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 10 .9 0 (.42 9) 10 .7 0 (.42 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 16 .10 (.63 4 ) 15 .90 (.62 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) F E E D D IRE C TIO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079) 2 3.9 0 (.9 41) 4 33 0.00 (1 4.1 73) MA X. 60.00 (2.3 62) MIN . NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E . 26 .40 (1.03 9) 24 .40 (.961 ) 3 3 0.40 (1.1 97) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98 |
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